Mainly used for scribing and cutting of diamond, sapphire; it also applies to the scribing and fine processing of thin ceramics, silicon wafers, IC die, the polymer films and other materials.
Specifications
Laser wavelength 532 nm
Beam divergence angle ≤ 2.0mrad
Cutting width 10-30μm
Cutting depth of 10-40μm
Cutting width precision of ± 2μm
Cutting accuracy ± 2μm
Cutting a straight line accuracy of ± 5μm
Cutting straight-line speed 0-300 mm / s
Range of processing 300mm × 300mm
Rated input voltage single-phase AC 220V ± 10%, 50 Hz/60Hz, with protection of ground (such as voltage fluctuation is too large to be equipped with voltage regulator)
Maximum input power 2 kW
Size 1300 mm x 710 mm x 1400 mm
Cooling oil-cooling