sapphira wafer
Regular specification of Sapphire Wafer
Crystal Material: min 99.995%, High Purity, Monocrystalline Al2O3
Diameter: 50.8mm+/-0.1mm; 76.2mm+/-0.25mm; 100.0mm+/-0.2mm; 150.0+/-0.5mm
Thickness: 430+/-25um; 650+/-25um; 650+/-25um; 1300+/-25um
Orientation: C-axis(0001) to M (1-100) 0.2°±0.1°and C-axis(0001) to A (11-20) 0°±0.1°
Single Side Polish:
TTV max 3um; max5um; max5um; max 15um
Double Side Polish：
TTV max3um; max2.5um; max2.5um; max3um
Crystal Material: min 99.995%, High Purity, Monocrystalline Al2O3
Diameter: 50.8mm+/-0.1mm; 76.2mm+/-0.25mm; 100.0mm+/-0.2mm; 150.0+/-0.5mm
Thickness: 430+/-25um; 650+/-25um; 650+/-25um; 1300+/-25um
Orientation: C-axis(0001) to M (1-100) 0.2°±0.1°and C-axis(0001) to A (11-20) 0°±0.1°
Single Side Polish:
TTV max 3um; max5um; max5um; max 15um
Double Side Polish：
TTV max3um; max2.5um; max2.5um; max3um
Main Products
Sapphire substrate, Sapphire window, GaN wafer, Silicon wafer