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Regular specification of SiC Wafer
Polytype: 6H-SiC/ 4H-SiC
Crystal Structure: Hexagonal
Orientation: C
Conductivity Type: N-type
Dopant: N2 (Nitrogen)
Diameter: 2 inch
Thickness: 330 um
Resistivity: 0.03 ~ 0.12 ohm-cm
Surface finish: Si face polished
TTV: max 10 um
Bandgap: 3.02 eV / 3.1 eV
Micropipe Density: max 200 cm -2
Polytype: 6H-SiC/ 4H-SiC
Crystal Structure: Hexagonal
Orientation: C
Conductivity Type: N-type
Dopant: N2 (Nitrogen)
Diameter: 2 inch
Thickness: 330 um
Resistivity: 0.03 ~ 0.12 ohm-cm
Surface finish: Si face polished
TTV: max 10 um
Bandgap: 3.02 eV / 3.1 eV
Micropipe Density: max 200 cm -2
Main Products
Sapphire substrate, Sapphire window, GaN wafer, Silicon wafer