GE
Regular specification of Germanium (Ge) Wafer
Purity: 99.9999% (6N)
Crystal structure: cubic
Lattice constant: a=5.6576
Bandgap: 0.67 eV (300 K)
Melting point: 937.4 C
Dimension:
2 inch x 0.4 mm, 2 inch x 0.5 mm
4 inch x 0.5 mm
Other dimensions available
Orientation: C/R/M
Conductive type: Undoped native / n-type / p-type
Etch pit density (EPD):
Low 1000 - 5000 cm-2
High < 10000 cm-2
Polishing: Single side/ double side epi-polished
Surface roughness: max 0.5nm
Purity: 99.9999% (6N)
Crystal structure: cubic
Lattice constant: a=5.6576
Bandgap: 0.67 eV (300 K)
Melting point: 937.4 C
Dimension:
2 inch x 0.4 mm, 2 inch x 0.5 mm
4 inch x 0.5 mm
Other dimensions available
Orientation: C/R/M
Conductive type: Undoped native / n-type / p-type
Etch pit density (EPD):
Low 1000 - 5000 cm-2
High < 10000 cm-2
Polishing: Single side/ double side epi-polished
Surface roughness: max 0.5nm
Main Products
Sapphire substrate, Sapphire window, GaN wafer, Silicon wafer