Specifications

• Drain to Source Voltage(VDSS): 50V(Vgs = 0V)• Gate to Source Voltage(VGSS): ±20V(Vds = 0V)• Channel Dissipation(Pch): 176.5W(Tc = 25°C)• Input Power(Pin): 12.5W(Zg = Zl = 50Ω)• Drain Current(ID): 25A• Zero Gate Voltage Drain Current(IDSS)(Max): 10μA(VDS = 17V , VGS = 0V)• Gate to Source Leak Current(IGSS)(Max): 1μA(VGS = 10V , VDS = 0V)• Gate Threshold Voltage(VTH)(Min): 1.5V(VDS = 12V , IDS = 1mA)• Gate Threshold Voltage(VTH)(Max): 4.5V(VDS = 12V , IDS = 1mA)• Output Power(Pout)(Min): 100W(VDD = 12.5V , Pin = 7W , f = 30MHz , Idq = 1A)• Output Power(Pout)(Typ): 110W(VDD = 12.5V , Pin = 7W , f = 30MHz , Idq = 1A)• Drain Efficiency(ηD)(Min): 55%(VDD = 12.5V , Pin = 7W , f = 30MHz , Idq = 1A)• Drain Efficiency(ηD)(Typ): 60%(VDD = 12.5V , Pin = 7W , f = 30MHz , Idq = 1A)• Channel Temperature(Tch): 175°C• Storage Temperature(Tstg): -40°C to +175°C• Brand Name: MITSUBISHI • Package Type: Ceramic(large)• Packing: 9 units / tray• Compatible with many other wireless communication products • Mass stock on-hand merchandise supply• We supply various electronic components and welcome your inquiries

Features

• Lead-Free Type • RoHS Compliant• High Power and High Gain: Pout > 100W, Gp > 11.5dB @Vdd = 12.5V, f = 30MHz• High Efficiency: 60%typ. on HF Band