Specifications

• Drain to Source Voltage(VDSS): 30V(Vgs = 0V)• Gate to Source Voltage(VGSS): ±20V(Vds = 0V)• Channel Dissipation(Pch): 48W(Tc = 25°C)• Input Power(Pin): 1.5W(Zg = Zl = 50Ω)• Drain Current(ID): 4A• Zero Gate Voltage Drain Current(IDSS)(Max): 100μA(VDS = 17V , VGS = 0V)• Gate to Source Leak Current(IGSS)(Max): 1μA(VGS = 10V , VDS = 0V)• Gate Threshold Voltage(VTH)(Min): 1.5V(VDS = 12V , IDS = 1mA)• Gate Threshold Voltage(VTH)(Typ): 2.0V(VDS = 12V , IDS = 1mA)• Gate Threshold Voltage(VTH)(Max): 2.5V(VDS = 12V , IDS = 1mA)• Output Power(Pout1)(Min): 15W(VDD = 12.5V , Pin = 0.6W , f = 175MHz , Idq = 0.5A)• Output Power(Pout1)(Typ): 18W(VDD = 12.5V , Pin = 0.6W , f = 175MHz , Idq = 0.5A)• Drain Efficiency(ηD1)(Min): 55%(VDD = 12.5V , Pin = 0.6W , f = 175MHz , Idq = 0.5A)• Drain Efficiency(ηD1)(Typ): 60%(VDD = 12.5V , Pin = 0.6W , f = 175MHz , Idq = 0.5A)• Output Power(Pout2)(Min): 15W(VDD = 12.5V , Pin = 3W , f = 520MHz , Idq = 0.5A)• Output Power(Pout2)(Typ): 18W(VDD = 12.5V , Pin = 3W , f = 520MHz , Idq = 0.5A)• Drain Efficiency(ηD2)(Min): 50%(VDD = 12.5V , Pin = 3W , f = 520MHz , Idq = 0.5A)• Drain Efficiency(ηD2)(Typ): 55%(VDD = 12.5V , Pin = 3W , f = 520MHz , Idq = 0.5A)• Channel Temperature(Tch): 150°C• Storage Temperature(Tstg): -40°C to +150°C• Brand Name: MITSUBISHI • Mounting Type: Through Hole / DIP(Dual in -line package)• Package Outline: TO-220S• Lead Count: 3• Packing: 50 units / tube• Compatible with many other wireless communication products • Mass stock on-hand merchandise supply• We supply various electronic components and welcome your inquiries

Features

• Lead-Free Type • RoHS Compliant• High Power and High Gain:   Pout > 15W, Gp > 14dB @Vdd = 12.5V, f = 175MHz  Pout > 15W, Gp > 7dB @Vdd = 12.5V, f = 520MHz• High Efficiency: 60%typ. on VHF Band• High Efficiency: 55%typ. on UHF Band